r 20 1510 c 1 / 5 ? ?? s ensitive g ate scrs 3ct0 8 b order codes ? marking halogen free ? package ? packaging 3ct 08b - o - t - n - c 3CT08B no to - 92 ? bag 3ct 08b - o - t - b - a 3CT08B no to - 92 brede ? main characteristics i t( av ) 0. 8 a v drm /v rrm 8 00 v i gt 10 - 1 0 0 a ? package pin description 1 k 2 ? g 3 a ? ? ? ? applications ? half ac switching ? phase control ? ? ? ? ???? ? ???? ? rohs ? features ? glass - passivated mesa chip for reliability and uniform ? low on - state voltage and high i tsm ? rohs products to - 92 ? order message
r 3ct0 8 b 20 15 10 c 2 / 5 ?? absolute ratings (tc=25 ) e l ectrical c haracteristic (t c =25 unless otherwise stated ) ? dynamic characteristics (t c =25 unless otherwise stated ) ? parameter symbol ? value unit ???? repetitive peak off - state voltage v drm 8 00 v ??? repetitive peak reverse voltage v rrm 8 00 v ??? average on - state current i t av 0. 8 a ?? on - state rms current ( half sine wave ) i t ( rms ) 1. 2 a ????? non - repetitive surge peak on - state current ( half sine wave , t= 1 0ms ) i tsm 12 a i 2 t for fusing ( t=10ms ) i 2 t 0.72 a 2 s ?? peak gate current i gm 1 a ?? ? peak gate voltage v gm 5 v ?? ? peak reverses gate voltage v rg m 5 v ?? peak gate power p gm 2 w ?? average gate power ( over any 20ms period ) p g ( av ) 0.1 w ? storage temperature t stg - 40~150 operation junction temperature t j 125 ? parameter symbol tests conditions min typ max unit ? ? peak repetitive blocking current i drm v dm =v drm , tj=125 , r gk =1k - - 0.1 ma ? peak repetitive reverse current i rrm v rm =v rrm , tj=125 , r gk =1k - - 0.1 ma ???? peak on - state voltage v tm i tm = 1 a - 1. 7 v ? gate trigger current i gt v dm =12v,i t =0.1a 10 - 1 0 0 a ?? gate trigger voltage v gt v dm =12v,i t =0.1a - 0.65 0.8 v ?? holding current i h v dm =12v, i gt =1ma - - 1 ma ? parameter symbol tests conditions min typ max unit ??? critical rate of rise of off - state voltage dv/dt v dm =67% v drm(max) , tj=125 ,rgk=1k 10 - - v/s ? circuit commutaded turn - off time tq v dm =67v drm tj=125 v r =35v i tm =1.6a di tm /dt=30a/ s dv/dt=2v/ s r gk =1k - 100 - s
r 3ct0 8 b 20 15 10 c 3 / 5 ? t c t hermal characteristic electrical characteristics (curves) ??? i t av a ??? v tm v tq ?? tq circuit principle ? parameter symbol ? value unit ?? thermal resistance junction to lead r th(j - l) 60 max /w ? thermal resistance junction to ambient r th(j - a ) 150 typ ?? i t (a) t c - i t av i t C v tm
r 3ct0 8 b 20 15 10 c 4 / 5 ? package mechanical data to - 92 unit mm a 3.30 - 3.90 b 0.35 - 0.55 c 0.31 - 0.51 d 4.30 - 4.90 e 4.30 - 4.90 e 1.17 - 1.37 l 12.50 - 15.50 q 1 0.85 - 1.00
r 3ct0 8 b 20 15 10 c 5 / 5 ? appendix ?? revision history date ? last rev. new rev. ? description of changes 2014 - 4 - 8 108a 404b itsm 2015 - 10 - 22 404b 201510 c ?? ? ? 1. ?????????? ?? ?? ? ??? 2. ??? ?? ? 3. ????? ? ??? 4 . ??? n ote 1. jilin sino - microelectronics co., ltd sales its product either thro ugh direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ?? ?? 99 ? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ? ?? 99 ? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 : 86 - 432 - 6 4671533 c ontact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwdz.com.cn m arket department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678411 fax: 86 - 432 - 6 4671 533
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